2N5038 datasheet(2/4 Pages) STMICROELECTRONICS

Part #	2N5038

Description	HIGH CURRENT NPN SILICON TRANSISTOR

Download	4 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

Logo

2 / 4 page

THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

1.25

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEV

Collector Cut-off

Current (VBE = -1.5V)

VCE = 140 V

VCE = 100 V

Tc = 150

oC50

10

mA

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 70 V

20

mA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 7 V

VEB = 5 V

50

5

mA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

IC = 0.2 A

90

V

VCER(sus)

∗ Collector-Emitter

Sustaining Voltage

IC = 0.2 A

RBE = 50

Ω

110

V

VCEX(sus)

∗ Collector-Emitter

Sustaining Voltage

IC = 0.2 A

RBE = 100

Ω VBE =-1.5V

150

V

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 12 A

IB = 1.2 A

IC = 20 A

IB = 5 A

1

2.5

V

VBE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 20 A

IB = 5 A

3.3

V

VBE

∗

Base-Emitter Voltage

IC = 12 A

VCE = 5 V

1.8

V

hFE

∗

DC Current Gain

IC = 2 A

VCE = 5 V

IC = 12 A

VCE = 5 V

50

20

250

100

hfe

Small Signal Current

Gain

IC = 2 A

VCE = 10 V

f = 5 MHz

12

CCBO

Collector-Base

Capacitance

IE = 0

VCB = 10 V

f = 1 MHz

300

pF

tr

Rise Time

IC = 12 A

VCC = 30 V

IB1 = -IB2 = 1.2A

0.5

µs

ts

Storage Time

1.5

µs

tf

Fall Time

0.5

µs

Is/b

∗∗

Second Breakdown

Collector Current

VCE = 28 V

VCE = 45 V

5

0.9

A

Es/b

Second Breakdown

Energy

VBE = -4 V RBE = 20

Ω L = 180µH13

mJ

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

2N5038

2/4

Similar Part No. - 2N5038

Manufacturer	Part #	Datasheet	Description
Mospec Semiconductor	2N5038	89Kb / 2P	POWER TRANSISTORS(20A,140W)
Seme LAB	2N5038	43Kb / 2P	Bipolar NPN Device in a Hermetically Sealed TO3
ON Semiconductor	2N5038	124Kb / 4P	NPN SILICON POWER TRANSISTORS REV 7
ON Semiconductor	2N5038	84Kb / 3P	NPN Silicon Transistors 20 AMPERE POWER TRANSISTORS 90 VOLTS - 140 WATTS August, 2007 - Rev. 12
Boca Semiconductor Corp...	2N5038	95Kb / 2P	NPN SILICON POWER TRANSISTORS

More results

Similar Description - 2N5038

Manufacturer	Part #	Datasheet	Description
STMicroelectronics	BUTW92	61Kb / 4P	HIGH CURRENT NPN SILICON TRANSISTOR
Seme LAB	BDY25A	49Kb / 2P	HIGH CURRENT NPN SILICON TRANSISTOR
New Jersey Semi-Conduct...	BUX41	119Kb / 2P	HIGH CURRENT NPN SILICON TRANSISTOR
STMicroelectronics	BU407	61Kb / 4P	HIGH CURRENT NPN SILICON TRANSISTOR
STMicroelectronics	BUV20	41Kb / 4P	HIGH CURRENT NPN SILICON TRANSISTOR
New Jersey Semi-Conduct...	2N5038	75Kb / 2P	HIGH CURRENT NPN SILICON TRANSISTOR
Seme LAB	BDY26C	20Kb / 2P	HIGH CURRENT NPN SILICON TRANSISTOR
	BDY28A	49Kb / 2P	HIGH CURRENT NPN SILICON TRANSISTOR
	BDY28B	49Kb / 2P	HIGH CURRENT NPN SILICON TRANSISTOR
STMicroelectronics	BDY90	62Kb / 4P	HIGH CURRENT NPN SILICON TRANSISTOR
STMicroelectronics	BUR51	65Kb / 4P	HIGH CURRENT NPN SILICON TRANSISTOR

More results

2N5038 Datasheet(PDF) 2 Page - STMicroelectronics

2N5038 Datasheet(HTML) 2 Page - STMicroelectronics

Similar Part No. - 2N5038

Similar Description - 2N5038

Html Pages

1 2 3 4

Datasheet Download

Link URL