Data Sheet D14236EJ8V0DS

3

NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE

°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Zero Gate Voltage Drain Current

10

Gate Leakage Current

±10

Gate to Source Threshold Voltage

2.0

3.0

4.0

V

Forward Transfer Admittance

30

60

S

Drain to Source On-state Resistance

3.4

4.3

m

Ω

Input Capacitance

7300

11000

pF

Output Capacitance

1400

2100

pF

Reverse Transfer Capacitance

f = 1 MHz

620

1120

pF

Turn-on Delay Time

38

84

ns

Rise Time

27

68

ns

Turn-off Delay Time

110

220

ns

Fall Time

Ω

32

80

ns

Total Gate Charge

120

180

nC

Gate to Source Charge

30

nC

Gate to Drain Charge

43

nC

Body Diode Forward Voltage

0.95

V

Reverse Recovery Time

64

ns

Reverse Recovery Charge

di/dt = 100 A/

99

nC

TEST CIRCUIT 3 GATE CHARGE

PG.

Ω

50

Ω

D.U.T.

L

TEST CIRCUIT 1 AVALANCHE CAPABILITY

PG.

D.U.T.

TEST CIRCUIT 2 SWITCHING TIME

PG.

50

Ω

D.U.T.

0

τ = 1 s

Duty Cycle

τ

Wave Form

Wave Form

10%

0

0

90%

90%

90%

10%

10%

μ