Data Sheet D14676EJ6V0DS

3

NP88N075EUE, NP88N075KUE, NP88N075CUE, NP88N075DUE, NP88N075MUE, NP88N075NUE

°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Zero Gate Voltage Drain Current

10

Gate Leakage Current

±100

nA

Gate to Source Threshold Voltage

2.0

3.0

4.0

V

Forward Transfer Admittance

30

60

S

Drain to Source On-state Resistance

6.2

8.5

m

Ω

Input Capacitance

8200 12300

pF

Output Capacitance

800

1200

pF

Reverse Transfer Capacitance

f = 1 MHz

440

800

pF

Turn-on Delay Time

35

77

ns

Rise Time

28

70

ns

Turn-off Delay Time

105

210

ns

Fall Time

Ω

16

40

ns

Total Gate Charge

150

230

nC

Gate to Source Charge

30

nC

Gate to Drain Charge

52

nC

Body Diode Forward Voltage

1.0

V

Reverse Recovery Time

80

ns

Reverse Recovery Charge

di/dt = 100 A/

240

nC

TEST CIRCUIT 3 GATE CHARGE

PG.

Ω

50

Ω

D.U.T.

L

TEST CIRCUIT 1 AVALANCHE CAPABILITY

PG.

D.U.T.

TEST CIRCUIT 2 SWITCHING TIME

PG.

50

Ω

D.U.T.

0

τ = 1 μs

Duty Cycle

τ

Wave Form

Wave Form

10%

0

0

90%

90%

90%

10%

10%