Data Sheet D14235EJ4V0DS

3

NP86N04EHE, NP86N04KHE, NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE

°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Zero Gate Voltage Drain Current

10

Gate Leakage Current

±10

Gate to Source Threshold Voltage

2.0

3.0

4.0

V

Forward Transfer Admittance

29

57

S

Drain to Source On-state Resistance

3.5

4.4

m

Ω

Input Capacitance

5900

8900

pF

Output Capacitance

1200

1800

pF

Reverse Transfer Capacitance

f = 1 MHz

530

960

pF

Turn-on Delay Time

32

71

ns

Rise Time

24

59

ns

Turn-off Delay Time

Ω

110

220

ns

Fall Time

33

82

ns

Total Gate Charge

110

170

nC

Gate to Source Charge

22

nC

Gate to Drain Charge

36

nC

Body Diode Forward Voltage

0.93

V

Reverse Recovery Time

70

ns

Reverse Recovery Charge

di/dt = 100 A/

125

nC

TEST CIRCUIT 3 GATE CHARGE

PG.

Ω

50

Ω

D.U.T.

L

TEST CIRCUIT 1 AVALANCHE CAPABILITY

PG.

D.U.T.

TEST CIRCUIT 2 SWITCHING TIME

PG.

50

Ω

D.U.T.

0

τ = 1 μs

Duty Cycle

τ

Wave Form

Wave Form

10%

0

0

90%

90%

90%

10%

10%