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TLP112 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part No. TLP112
Description  Photo−IC Digital Logic Isolation
Download  7 Pages
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TLP112 Datasheet(HTML) 3 Page - Toshiba Semiconductor

   
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TLP112
2007-10-01
3
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 16mA
1.65
1.85
V
Forward voltage
temperature coefficient
ΔVF / ΔTa
IF = 16mA
−2
mV / °C
Reverse current
IR
VR = 5V
10
μA
Capacitance between
terminals
CT
VF = 0, f = 1MHz
45
pF
IOH (1)
IF = 0mA, VCC = VO = 5.5V
3
500
nA
IOH (2)
IF = 0mA, VCC = VO = 15V
5
High level output
current
IOH
IF = 0mA, VCC = VO = 15V
Ta = 70°C
50
μA
High level supply
current
ICCH
IF = 0mA, VCC = 15V
0.01
1
μA
Current transfer ratio
IO / IF
IF =16mA, VCC = 4.5V
VO = 0.4V
10
%
Low level output
voltage
VOL
IF = 16 mA, VCC = 4.5V
IO = 1.1mA
0.4
V
Isolation resistance
RS
R.H. ≤ 60%
VS = 500V DC
(Note 6)
5×10
10
10
14
Stray capacitance
between input to output
CS
VS = 0, f = 1MHz
(Note 6)
0.8
pF
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Cir
cuit
Test Condition
Min.
Typ.
Max.
Unit
Propagation delay time
(H→L)
tpHL
1
IF = 0→16mA
VCC = 5V, RL= 4.1kΩ
0.8
μs
Propagation delay time
(L→H)
tpLH
1
IF = 16→0mA
VCC = 5V, RL= 4.1kΩ
2.0
μs
Common mode transient
immunity at high output
level
CMH
2
IF = 0mA, VCM = 200Vp−p
RL = 4.1kΩ
1500
V / μs
Common mode transient
immunity at low output
level
CML
2
IF =16mA, VCM = 200Vp−p
RL = 4.1kΩ
−1500
V / μs
(Note 6) Device considered a two
−terminal device: Pins 1 and 3 shorted together and Pin 4,
5 and 6 shorted together.
(Note 7) Maximum electrostatic discharge voltage for any pins: 100V (C=200pF, R=0)


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