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1N6263 Datasheet(PDF) 1 Page - STMicroelectronics

Part No. 1N6263
Description  SMALL SIGNAL SCHOTTKY DIODE
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

1N6263 Datasheet(HTML) 1 Page - STMicroelectronics

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®
1N 6263
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
Metal to silicon junction diode featuring high break-
down, low turn-on voltage and ultrafast switching.
Primarly intended for high level UHF/VHF detection
and pulse application with broad dynamic range.
August 1999 Ed: 1A
Symbol
Parameter
Value
Unit
VRRM
Repetitive Peak Reverse Voltage
60
V
IF
Forward Continuous Current*
Ta = 25
°C
15
mA
IFSM
Surge non Repetitive Forward Current*
tp
≤ 1s
50
mA
Tstg
Tj
Storage and Junction Temperature Range
- 65 to 200
- 65 to 200
°C
TL
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
230
°C
ABSOLUTE RATINGS (limiting values)
Symbol
Test Conditions
Value
Unit
Rth(j-a)
Junction-ambient*
400
°C/W
THERMAL RESISTANCE
* On infinite heatsink with 4mm lead length
** Pulse test: tp
≤ 300µs δ < 2%.
Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
VBR
Tamb = 25
°CIR = 10µA
60
V
VF * *
Tamb = 25
°CIF = 1mA
0.41
V
Tamb = 25
°CIF = 15mA
1
IR * *
Tamb = 25
°CVR = 50V
0.2
µA
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
C
Tamb = 25
°CVR = 0V
f = 1MHz
2.2
pF
τ
Tamb = 25
°CIF = 5mA
Krakauer Method
100
ps
DYNAMIC CHARACTERISTICS
DO 35
(Glass)
1/3


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