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1N5819 Datasheet(PDF) 3 Page - STMicroelectronics

Part # 1N5819
Description  LOW DROP POWER SCHOTTKY RECTIFIER
Download  5 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

1N5819 Datasheet(HTML) 3 Page - STMicroelectronics

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1N581x
3/5
1E-3
1E-2
1E-1
1E+0
0
1
2
3
4
5
6
7
8
9
10
IM(A)
t(s)
Ta=100°C
Ta=75°C
Ta=25°C
IM
t
δ=0.5
Fig. 5-1:
Non repetitive surge peak forward
current versus overload duration
(maximum values) (1N5817/1N5818).
1E-1
1E+0
1E+1
1E+2
1E+3
0.0
0.2
0.4
0.6
0.8
1.0
Zth(j-a)/Rth(j-a)
T
δ=tp/T
tp
tp(s)
δ = 0.1
δ = 0.2
δ = 0.5
Single pulse
Fig. 6: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
printed circuit board, e(Cu)=35mm, recommended
pad layout).
1E-3
1E-2
1E-1
1E+0
0
1
2
3
4
5
6
7
8
IM(A)
t(s)
Ta=100°C
Ta=75°C
Ta=25°C
IM
t
δ=0.5
Fig. 5-2:
Non repetitive surge peak forward
current versus overload duration
(maximum values) (1N5819).
1
2
5
102040
10
20
50
100
200
500
C(pF)
VR(V)
1N5819
1N5817
1N5818
F=1MHz
Tj=25°C
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (°C)
j
P(t )
P
(25°C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (µs)
p
P(t )
P
(1µs)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.


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