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1N5819 Datasheet(PDF) 2 Page - STMicroelectronics

Part # 1N5819
Description  LOW DROP POWER SCHOTTKY RECTIFIER
Download  5 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

1N5819 Datasheet(HTML) 2 Page - STMicroelectronics

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1N581x
2/5
Symbol
Parameter
Tests Conditions
1N5817 1N5818 1N5819
Unit
IR *
Reverse leakage
current
Tj = 25°C
VR =VRRM
0.5
0.5
0.5
mA
Tj = 100°C
10
10
10
mA
VF *
Forward voltage drop
Tj = 25
°CIF =1 A
0.45
0.50
0.55
V
Tj=25
°CIF =3 A
0.75
0.80
0.85
V
Pulse test : * tp = 380
µs, δ <2%
To evaluate the conduction losses use the following equations :
P=0.3xIF(AV) + 0.090 IF
2
(RMS ) for 1N5817 / 1N5818
P=0.3xIF(AV) + 0.150 IF
2
(RMS ) for 1N5819
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient
Lead length = 10 mm
100
°C/W
Rth (j-l)
Junction to lead
Lead length = 10 mm
45
°C/W
THERMAL RESISTANCES
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.0
0.1
0.2
0.3
0.4
0.5
0.6
PF(av)(W)
IF(av) (A)
T
δ=tp/T
tp
δ = 0.2
δ = 0.5
δ = 1
δ = 0.05
δ = 0.1
Fig. 1: Average forward power dissipation versus
average forward current (1N5817/1N5818).
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
PF(av)(W)
IF(av) (A)
T
δ=tp/T
tp
δ = 0.2
δ = 0.5
δ = 1
δ = 0.05
δ = 0.1
Fig. 2: Average forward power dissipation versus
average forward current (1N5819).
0
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
IF(av)(A)
Tamb(°C)
T
δ=tp/T
tp
Rth(j-a)=100°C/W
Rth(j-a)=Rth(j-l)=45°C/W
Fig. 2-1: Average forward current versus ambient
temperature (
δ=0.5) (1N5817/1N5818).
0
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
IF(av)(A)
Tamb(°C)
T
δ=tp/T
tp
Rth(j-a)=100°C/W
Rth(j-a)=Rth(j-l)=45°C/W
Fig. 2-2: Average forward current versus ambient
temperature (
δ=0.5) (1N5819).


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