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TLN108 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TLN108 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page TLN108(F) 2007-10-01 1 TOSHIBA Infrared LED GaAs Infrared Emitter TLN108(F) Lead(Pb)-Free Opto −Electronic Switches Tape And Card Readers Equipment Using Infrared Transmission • TO−18 metal package • High radiant intensity: IE = 20 mW/sr (typ.) • Excellent radiant−intensity linearity. Modulation by pulse operation and high frequency is possible. • Highly reliable due to hermetic seal Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF 100 mA Forward current derating (Ta > 25°C) ΔIF / °C −1 mA / °C Pulse forward current (Note 1) IFP 1 A Reverse voltage VR 5 V Operating temperature range Topr −40~125 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width ≦100μs, repetitive frequency = 100 Hz Pin Connection 1. Anode 2. Cathode (case) 1 2 Markings Unit: mm TOSHIBA 4−5Q2 Weight: 0.33 g (typ.) ・ Month of manufacture (January to December denoted by letters A to L respectively) Letter color:Red Product No. (TL omitted) Monthly lot number Year of manufacture (last digit of year of manufacture) N108 |
Similar Part No. - TLN108_07 |
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Similar Description - TLN108_07 |
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