TLN108(F)

2007-10-01

1

TOSHIBA Infrared LED GaAs Infrared Emitter

TLN108(F)

Lead(Pb)-Free

Opto

−Electronic Switches

Tape And Card Readers

Equipment Using Infrared Transmission

• TO−18 metal package

• Excellent radiant−intensity linearity. Modulation by pulse operation

and high frequency is possible.

• Highly reliable due to hermetic seal

Characteristic

Symbol

Rating

Unit

Forward current

100

mA

Forward current derating

(Ta > 25°C)

−1

mA / °C

Pulse forward current

(Note 1)

1

A

Reverse voltage

5

V

Operating temperature range

−40~125

°C

Storage temperature range

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Note 1: Pulse width ≦100μs, repetitive frequency = 100 Hz

Pin Connection

1.

Anode

2.

Cathode (case)

1

2

Markings

Unit: mm

TOSHIBA

4−5Q2

Weight: 0.33 g (typ.)

･

Month of manufacture

(January to December denoted by letters A to L respectively)

Letter color：Red

Product No. (TL omitted)

Monthly lot number

Year of manufacture

(last digit of year of manufacture)

N108