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TD62308BFG Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TD62308BFG Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 11 page TD62308BP1G/BFG 2006-06-13 2 Schematics (each driver) Note : The Output parasitic diodes cannot be used as clamp diodes. Precautions for Using (1) This IC does not include built-in protection circuits for excess current or overvoltage. If this IC is subjected to excess current or overvoltage, it may be destroyed. Hence, the utmost care must be taken when systems which incorporate this IC are designed. Utmost care is necessary in the design of the output line, VCC, COMMON and GND line since IC may be destroyed due to short−circuit between outputs, air contamination fault, or fault by improper grounding. (2) If a TD62308BP-1/BF is being used to drive an inductive load (such as a motor, solenoid or relay), Toshiba recommends that the diodes (pins 9 and 16) be connected to the secondary power supply pin so as to absorb the counter electromotive force generated by the load. Please adhere to the device’s absolute maximum ratings. Toshiba recommends that zener diodes be connected between the diodes (pins 9 and 16) and the secondary power supply pin (as the anode) so as to enable rapid absorption of the counter electromotive force. Again, please adhere to the device’s absolute maximum ratings. Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Supply Voltage VCC 7 V Output Sustaining Voltage VCE (SUS) −0.5~80 V Parasitic Transistor Output Voltage VCEF (Note 1) 80 V Output Current IOUT 1.5 A / ch Input Current IIN −10 mA Input Voltage VIN 7 V Clamp Diode Reverse Voltage VR 80 V Clamp Diode Forward Current IF 1.5 A BP1G 1.47 / 2.7 (Note 2) Power Dissipation BFG PD 0.9 / 1.4 (Note 3) W Operating Temperature Topr −40~85 °C Storage Temperature Tstg −55~150 °C Note 1: Parasitic Transistor (COMMON - GND - OUTPUT) Output Voltage Note 2: On Glass Epoxy PCB (50 × 50 × 1.6 mm Cu 50%) Note 3: On Glass Epoxy PCB (60 × 30 × 1.6 mm Cu 30%) |
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