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TC74VHC03F Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part No. TC74VHC03F
Description  Quad 2-Input NAND Gate (open drain)
Download  9 Pages
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TC74VHC03F Datasheet(HTML) 3 Page - Toshiba Semiconductor

   
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TC74VHC03F/FN/FT/FK
2007-10-01
3
Operating Ranges (Note)
Characteristics
Symbol
Rating
Unit
Supply voltage
VCC
2.0 to 5.5
V
Input voltage
VIN
0 to 5.5
V
Output voltage
VOUT
0 to VCC
V
Operating temperature
Topr
−40 to 85
°C
Input rise and fall time
dt/dv
0 to 100 (VCC = 3.3 ± 0.3 V)
0 to 20 (VCC = 5 ± 0.5 V)
ns/V
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
Electrical Characteristics
DC Characteristics
Test Condition
Ta
= 25°C
Ta
=
−40 to 85°C
Characteristics
Symbol
VCC (V)
Min
Typ.
Max
Min
Max
Unit
High-level input
voltage
VIH
2.0
3.0 to
5.5
1.50
VCC ×
0.7
1.50
VCC ×
0.7
V
Low-level input
voltage
VIL
2.0
3.0 to
5.5
0.50
VCC ×
0.3
0.50
VCC ×
0.3
V
IOL = 50 μA
2.0
3.0
4.5
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
Low-level output
voltage
VOL
VIN = VIH
IOL = 4 mA
IOL = 8 mA
3.0
4.5
0.36
0.36
0.44
0.44
V
Output off-state
current
IOZ
VIN = VIH or VIL
VOUT = VCC or GND
5.5
±0.25
±2.50
μA
Input leakage
current
IIN
VIN = 5.5 V or GND
0 to 5.5
±0.1
±1.0
μA
Quiescent supply
current
ICC
VIN = VCC or GND
5.5
2.0
20.0
μA


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