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QM75E2Y-H Datasheet(PDF) 6 Page - Mitsubishi Electric Semiconductor

Part No. QM75E2Y-H
Description  HIGH POWER SWITCHING USE INSULATED TYPE
Download  6 Pages
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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QM75E2Y-H Datasheet(HTML) 6 Page - Mitsubishi Electric Semiconductor

   
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Feb.1999
REVERSE RECOVERY CHARACTERISTICS
(VS. di/dt) (TYPICAL)
MAXIMUM SURGE CURRENT
REVERSE RECOVERY CHARACTERISTICS
(VS. IF) (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT
IF (A)
di/dt (A/
µs)
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM FORWARD CHARACTERISTIC
FORWARD VOLTAGE
VF (V)
PERFORMANCE CURVES (Diode part (D2))
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC
TIME (s)
2
10
1
10
0
10
0
10
1
10
2
10
3
10
–1
10
–1
10
2
10
1
10
0
10
2
10
1
10
0
10
2
10
1
10
0
10
–1
10
3
10
2
10
–1
10
0
10
1
10
1
10
0
10
–3
10
–2
10
–1
10
0
10
0
10
1
10
2
10
3
10
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0
400
800
1200
1600
2000
200
600
1000
1400
1800
7
5
3
2
7
5
3
2
7
5
3
2
0.6
1.0
1.4
1.8
2.2
Tj=25°C
7
5
3
2
7
5
3
2
7
5
3
2
0.2
0.4
0.6
0.8
1.0
0
5
3
2
7
5
3
2
4
4
4
4
4
7
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
Irr
trr
Tj=25°C
Tj=150°C
VR=300V
di/dt=–150A/µs
Qrr
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
Tj=25°C
Tj=150°C
VR=300V
IF=75A
Irr
Qrr
trr


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