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QM75E2Y-H Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

Part No. QM75E2Y-H
Description  HIGH POWER SWITCHING USE INSULATED TYPE
Download  6 Pages
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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QM75E2Y-H Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

   
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Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-H
HIGH POWER SWITCHING USE
INSULATED TYPE
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
BASE CURRENT
IB (A)
COLLECTOR CURRENT
IC (A)
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
COLLECTOR-EMITTER VOLTAGE
VCE (V)
BASE REVERSE CURRENT
–IB2 (A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
VCE (V)
CASE TEMPERATURE
TC (
°C)
3
10
2
10
1
10
0
10
0
10
1
10
2
10
3
10
1
10
0
10
–1
10
–2
10
100
80
60
40
20
0
0
20
60
100 120
160
40
80
140
10
30
50
70
90
7
0
10
1
10
7
5
4
3
2
0
10
7
5
4
34 5
2 34 5 7
1
10
2
–1
10
2
2
3
tf
Tj=25°C
Tj=125°C
IC=75A
IB1=1.5A
VCC=300V
ts
160
0
0
200
400
600
800
120
80
40
Tj=125°C
IB2=–2A
–5A
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
100µs
tw=50µs
1ms
DC
10ms
500µs
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0
10
23 4 5 7
1
10
23 4 5 7
2
10
2
IB1=–IB2=1.5A
VCC=300V
Tj=25°C
Tj=125°C
ts
ton
tf
7
5
3
2
7
5
3
2
7
5
3
2
0
5
4
4
4
4
3
2
1
Tj=25°C
Tj=125°C
IC=30A
IC=75A
IC=50A
IC=100A
NON-REPETITIVE
TC=25°C
COLLECTOR
DISSIPATION
SECOND BREAK-
DOWN AREA


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