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QM75E2Y-H Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part No. QM75E2Y-H
Description  HIGH POWER SWITCHING USE INSULATED TYPE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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QM75E2Y-H Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

   
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Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-H
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (Diode part (D2), Tj=25
°C)
Symbol
IRRM
VFM
trr
Qrr
Rth (j-c)
Rth (c-f)
Parameter
Repetitive peak reverse current
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
Test conditions
VR=VRRM, Tj=150
°C
IF=75A
IF=75A, di/dt=–150A/
µs, VR=300V, Tj=150°C
Junction to case
Conductive grease applied (case to fin)
Unit
mA
V
µs
µC
°C/W
°C/W
Limits
Min.
Typ.
Max.
1.0
1.5
0.9
30
0.6
0.15
PERFORMANCE CURVES
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER VOLTAGE
VCE (V)
COLLECTOR CURRENT
IC (A)
COLLECTOR CURRENT
IC (A)
BASE-EMITTER VOLTAGE
VBE (V)
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
1
10
0
10
7
5
4
3
2
–1
10
7
5
4
3
2
1.0
1.4
1.8
2.2
2.6
3.0
VCE=2.0V
Tj=25°C
200
160
120
80
40
0
01
2
3
4
5
Tj=25°C
IB=2.0A
IB=1.5A
IB=1.0A
IB=0.5A
3
10
7
5
4
3
2
2
10
7
5
4
3
2
0
10
23 4 5 7
1
10
23 4 5 7
2
10
2
VCE=5.0V
Tj=25°C
Tj=125°C
VCE=2.0V
1
10
7
5
4
3
2
0
10
7
5
4
3
2
–1
10
1
10
23 4 5 7
2
10
23 4 5 7
3
10
Tj=25°C
Tj=125°C
VBE(sat)
VCE(sat)
IB=1A


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