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M4T28-BR12SH1 Datasheet(PDF) 11 Page - STMicroelectronics

Part # M4T28-BR12SH1
Description  3.3V, 256Kbit (32Kbit x 8) TIMEKEEPER짰 SRAM
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M4T28-BR12SH1 Datasheet(HTML) 11 Page - STMicroelectronics

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M48T35AV
Operation modes
11/28
Table 4.
Write mode AC characteristics
2.3
Data retention mode
With valid VCC applied, the M48T35AV operates as a conventional BYTEWIDE™ static
RAM. Should the supply voltage decay, the RAM will automatically power-fail deselect, write
protecting itself when VCC falls within the VPFD (max), VPFD (min) window (see Figure 13,
Table 10, and Table 11 on page 21). All outputs become high impedance, and all inputs are
treated as “don't care.”
Note:
A power failure during a WRITE cycle may corrupt data at the currently addressed location,
but does not jeopardize the rest of the RAM's content. At voltages below VPFD (min), the
user can be assured the memory will be in a write protected state, provided the VCC fall time
is not less than tF. The M48T35AV may respond to transient noise spikes on VCC that reach
into the deselect window during the time the device is sampling VCC. Therefore, decoupling
of the power supply lines is recommended.
When VCC drops below VSO, the control circuit switches power to the internal battery which
preserves data and powers the clock. The internal button cell will maintain data in the
M48T35AV for an accumulated period of at least 7 years when VCC is less than VSO. As
system power returns and VCC rises above VSO, the battery is disconnected and the power
supply is switched to external VCC. Write protection continues until VCC reaches VPFD (min)
plus trec (min). E should be kept high as VCC rises past VPFD (min) to prevent inadvertent
WRITE cycles prior to processor stabilization. Normal RAM operation can resume trec after
VCC exceeds VPFD (max).
Symbol
Parameter(1)
1.
Valid for ambient operating temperature: TA = 0 to 70°C; VCC = 3.0 to 3.6V (except where noted).
M48T35AV
Unit
Min
Max
tAVAV
WRITE cycle time
100
ns
tAVWL
Address valid to WRITE enable low
0
ns
tAVEL
Address valid to chip enable low
0
ns
tWLWH
WRITE enable pulse width
80
ns
tELEH
Chip enable low to chip enable high
80
ns
tWHAX
WRITE enable high to address transition
10
ns
tEHAX
Chip enable high to address transition
10
ns
tDVWH
Input valid to WRITE enable high
50
ns
tDVEH
Input valid to chip enable high
50
ns
tWHDX
WRITE enable high to input transition
5
ns
tEHDX
Chip enable high to input transition
5
ns
tWLQZ
(2)(3)
2.
CL = 5pF.
3.
If E goes low simultaneously with W going low, the outputs remain in the high impedance state.
WRITE enable low to output Hi-Z
50
ns
tAVWH
Address valid to WRITE enable high
80
ns
tAVEH
Address valid to chip enable high
80
ns
tWHQX
(2)(3)
WRITE enable high to output transition
10
ns


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