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TC7SA34F Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TC7SA34F Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 8 page TC7SA34F/FU 2007-11-01 4 DC Characteristics (Ta = −40~85°C, 1.8 V <= VCC < 2.3 V) AC Characteristics (Ta = −40~85°C, input: tr = tf = 2.0 ns, CL = 30 pF, RL = 500 Ω) Characteristics Symbol Test Condition VCC (V) Min Max Unit 1.8 1.0 7.4 2.5 ± 0.2 0.8 3.7 Propagation delay time tpLH tpHL Figure 1, Figure 2 3.3 ± 0.3 0.6 2.8 ns For CL = 50 pF, add approximately 300 ps to the AC maximum specification. Capacitive Characteristics (Ta = 25°C) Characteristics Symbol Test Condition VCC (V) Typ. Unit Input capacitance CIN ⎯ 1.8, 2.5, 3.3 4 pF Power dissipation capacitance CPD fIN = 10 MHz (Note11) 1.8, 2.5, 3.3 12 pF Note11: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation. ICC (opr.) = CPD・VCC・fIN + ICC Characteristics Symbol Test Condition VCC (V) Min Max Unit High level VIH ⎯ 1.8~2.3 0.7 × VCC ⎯ Input voltage Low level VIL ⎯ 1.8~2.3 ⎯ 0.2 × VCC V IOH = −100 μA 1.8 VCC − 0.2 ⎯ High level VOH VIN = VIH IOH = −6 mA 1.8 1.4 ⎯ IOL = 100 μA 1.8 ⎯ 0.2 Output voltage Low level VOL VIN = VIL IOL = 6 mA 1.8 ⎯ 0.3 V Input leakage current IIN VIN = 0~3.6 V 1.8 ⎯ ±5.0 μA Power off leakage current IOFF VIN, VOUT = 0~3.6 V 0 ⎯ 10.0 μA VIN = VCC or GND 1.8 ⎯ 20.0 Quiescent supply current ICC VCC <= (VIN, VOUT) <= 3.6 V 1.8 ⎯ ±20.0 μA |
Similar Part No. - TC7SA34F_07 |
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Similar Description - TC7SA34F_07 |
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