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TC7PAU04FU Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TC7PAU04FU Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TC7PAU04FU 2007-11-01 1 TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7PAU04FU Dual Inverter (unbuffer) with 3.6 V Tolerant Input Features • Low voltage operation: VCC = 1.8~3.6 V • Quiescent supply current: ICC < 20 μA (max) VCC = 3.6 V, Ta = −40~85°C) • High-speed operation: tpd = 3.5 ns (max) (VCC = 3.0~3.6 V) tpd = 4.2 ns (max) (VCC = 2.3~2.7 V) tpd = 8.4 ns (max) (VCC = 1.8 V) • High-output current: IOH/IOL = ±24 mA (min) (VCC = 3.0 V) IOH/IOL = ±18 mA (min) (VCC = 2.3 V) IOH/IOL = ±6 mA (min) (VCC = 1.8 V) • Latch-up performance: ±300 mA • ESD Performance: ±200 V (JEITA) ±2000 V (MIL) • 3.6 V tolerant function for input and power down protection are provided. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Power supply voltage VCC −0.5~4.6 V DC input voltage VIN −0.5~4.6 V DC output voltage VOUT −0.5~VCC + 0.5(Note 1) V Input diode current IIK −50 mA Output diode current IOK ±50 (Note 2) mA DC output current IOUT ±50 mA DC VCC/ground current ICC ±100 mA Power dissipation PD 200 mW Storage temperature Tstg −65~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Date retention only Note 2: High or low state. VOUT absolute maximum rating must be observed. Marking Pin Assignment (top view) Weight: 0.0068 g (typ.) Type name E A 6 1A GND 2A 1 2 3 6 4 5 1Y VCC 2Y |
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