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TA4015FE Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TA4015FE Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page TA4015FE 2007-11-01 1 TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4015FE TA4015FE Use for Crystal Oscillators Features • Bias resistors, a transistor for oscillation and a transistor for buffer are packed in one package; hence, TA4015FT can easily compose a crystal oscillator. • TA4015FE comes with a 6-pin thin ultra-compact package and is suitable for super-high density mounting. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Power supply voltage VCC 6 V Circuit current ICC 9 mA Total power dissipation PD 100 mW Junction temperature Tj 125 °C Storage temperature Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit Circuit current ICC ⎯ VCC = 3.0 V 1.10 1.32 1.52 mA Oscillator base voltage VOSCB ⎯ VCC = 3.0 V 1.65 1.71 1.79 V Oscillator emitter voltage VOSCE ⎯ VCC = 3.0 V 0.92 0.99 1.06 V Buffer base voltage VBuffB ⎯ VCC = 3.0 V 2.20 2.28 2.36 V Fout voltage VFout ⎯ VCC = 3.0 V 1.95 2.02 2.10 V Characteristics Symbol Typ. Unit R1 resistance R1 7.5 k Ω R2 resistance R2 6.8 k Ω R3 resistance R3 24 k Ω R4 resistance R4 820 Ω R5 resistance R5 820 Ω Weight: 0.003 g (typ.) |
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Similar Description - TA4015FE_07 |
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