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TA78DS05BP Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TA78DS05BP Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 11 page TA78DS05,06,08,09,10,12,15BP,05CP 2006-11-02 2 Block Diagram Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Operating input voltage VIN 29 V Input voltage of surge VIN 60 V Power dissipation (Ta = 25°C) PD 800 mW Operating temperature Topr −40~85 °C Storage temperature Tstg −55~150 °C Junction temperature Tj 150 °C Thermal resistance Rth (j-a) 156 °C/W Soldering temperature time Tsol 260 (10 s) °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). |
Similar Part No. - TA78DS05BP_06 |
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Similar Description - TA78DS05BP_06 |
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