TA76L431FB

2007-01-31

3

Characteristics

Symbol

Rating

Unit

Cathode voltage

20

V

Cathode current

50

mA

Cathode-anode reverse current

50

mA

Reference voltage

7

V

Reference current

50

μA

Reference-anode reverse current

10

mA

Power dissipation

200 (Note 1)

mW

Thermal resistance

625 (Note 1)

°C/W

Operating junction temperature

−40~150

°C

Junction temperature

150

°C

Storage temperature

−55~150

°C

Note 1: Glass epoxy substrate mounting: 30 mm

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Operating Ranges

Characteristics

Symbol

Min

Typ.

Max

Unit

Cathode voltage

⎯

19

V

Cathode current

0.5

⎯

40

mA

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Reference voltage

2.470

2.495

2.520

V

Deviation of reference input voltage

over temperature

⎯

8

18

mV

⎯

0.8

2.4

Ratio of change in reference input

voltage to the change in cathode

voltage

⎯

0.8

2.0

mV/V

Reference input current

⎯

0.6

3

μA

Deviation of reference input current

over temperature

⎯

0.3

1.2

μA

Minimum cathode current for

regulation

⎯

0.2

0.5

mA

Off-State cathode current

⎯

⎯

1.0

μA

Dynamic impedance

⎯

0.2

0.5

Ω