SSM6K34TU

2007-11-01

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM6K34TU

High Current Switching Applications

Power Management Switch Applications

• 4.5Vdrive

• Low on resistance:

Characteristics

Symbol

Rating

Unit

Drain-Source voltage

30

V

Gate-Source voltage

±20

V

DC

3

Drain current

Pulse

6

A

Drain power dissipation

(Note 1)

500

mW

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure

rate, etc).

Note 1: Mounted on FR4 board.

(25.4 mm

× 25.4 mm × 1.6 t, Cu Pad: 645 mm

2

)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

30

⎯

⎯

Drain-Source breakdown voltage

15

⎯

⎯

V

Drain cut-off current

⎯

⎯

10

μA

Gate leakage current

⎯

⎯

±10

μA

Gate threshold voltage

1.3

⎯

2.5

V

Forward transfer admittance

(Note2)

3.4

6.8

⎯

S

(Note2)

⎯

58

77

Drain-Source ON resistance

(Note2)

⎯

38

50

m

Ω

Input capacitance

⎯

470

⎯

Reverse transfer capacitance

⎯

60

⎯

Output capacitance

⎯

80

⎯

pF

Total gate charge

―

10

―

Gate−source charge

―

7.6

―

Gate−drain charge

―

2.4

―

nC

Turn-on time

⎯

8.3

⎯

Switching time

Turn-off time

⎯

22

⎯

ns

Drain-Source forward voltage

(Note2)

―

−0.8

−1.2

V

Note2: Pulse test

Unit: mm

1,2,5,6 : Drain

3

: Gate

4

: Source

JEDEC

⎯

JEITA

⎯

TOSHIBA

2-2T1D

Weight: 7.0 mg (typ.)