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SSM5N15FE Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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SSM5N15FE Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page SSM5N15FE 2007-11-01 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N15FE High Speed Switching Applications Analog Switch Applications • Small package • Low ON resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±20 V DC ID 100 Drain current Pulse IDP 200 mA Drain power dissipation (Ta = 25°C) PD (Note 1) 150 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.135 mm 2 × 5) Marking Equivalent Circuit (top view) Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-2P1B Weight: 0.003 g (typ.) D P 5 4 1 2 3 Q1 54 123 Q2 0.3 mm |
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