SSM3K309T datasheet(4/5 Pages) TOSHIBA

Part #	SSM3K309T

Description	Power Management Switch Applications

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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4 / 5 page

SSM3K309T

2007-11-01

4

Drain-Source voltag VDS (V)

IDR – VDS

10

0

0.1

1

0.001

0.01

0.0001

-0.2

-0.6

-0.4

-1.0

-0.8

-1.2

−25 °C

100 °C

25 °C

Common Source

VGS = 0 V

Ta

= 25 °C

G

D

S

IDR

Drain current ID (A)

|Yfs| – ID

Common Source

VDS = 3 V

Ta

= 25 °C

0.01

10

0.001

0.1

1

10

0.01

0.1

1

30

3

0.3

0.03

Drain – Source voltage VDS (V)

C – VDS

10

0.1

1

10

100

1000

5000

3000

300

30

Common Source

Ta

= 25 °C

f

= 1 MHz

VGS = 0 V

Ciss

Coss

Crss

Drain current ID (A)

t – ID

1

0.01

100

0.1

1000

1

10

Common Source

VDD = 10 V

VGS = 0 ∼ 2.5 V

Ta

= 25 °C

RG = 4.7 Ω

toff

tf

10

ton

tr

Pulse width tw (s)

rth – tw

1

100

1000

10

0.001

0.01

0.1

1000

1

10

100

Single Pulse

a: Mounted on FR4 board

(25.4mm × 25.4mm × 1.6t ,

Cu Pad : 645 mm

2)

b: Mounted on FR4 board

(25.4mm × 25.4mm × 1.6t ,

Cu Pad : 0.8 mm

2×3)

b

a

Ambient temperature Ta (°C)

PD – Ta

800

0

200

120

100

140

400

600

160

1000

80

60

40

20

0

-20

-40

a

b

a: Mounted on FR4 board

(25.4mm × 25.4mm × 1.6t ,

Cu Pad : 645 mm

2)

b: Mounted on FR4 board

(25.4mm × 25.4mm × 1.6t ,

Cu Pad : 0.8 mm

2×3)

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