TC74HCT573AP/AF

2007-10-01

3

Absolute Maximum Ratings (Note 1)

Characteristics

Symbol

Rating

Unit

Supply voltage range

−0.5~7

V

DC input voltage

V

DC output voltage

V

Input diode current

±20

mA

Output diode current

±20

mA

DC output current

±35

mA

±75

mA

Power dissipation

500 (DIP) (Note 2)/180 (SOP)

mW

Storage temperature

−65~150

°C

Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or

even destruction.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 2: 500 mW in the range of Ta

= −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C shall be

applied until 300 mW.

Operating Ranges (Note)

Characteristics

Symbol

Rating

Unit

Supply voltage

4.5~5.5

V

Input voltage

V

Output voltage

V

Operating temperature

−40~85

°C

Input rise and fall time

0~500

ns

Note:

The operating ranges must be maintained to ensure the normal operation of the device.

Unused inputs must be tied to either VCC or GND.

Electrical Characteristics

DC Characteristics

Test Condition

Ta

= 25°C

Ta

= −40~85°C

Characteristics

Symbol

Min

Typ.

Max

Min

Max

Unit

High-level input

voltage

⎯

4.5~5.5

2.0

⎯

⎯

2.0

⎯

V

Low-level input

voltage

⎯

4.5~5.5

⎯

⎯

0.8

⎯

0.8

V

4.5

4.4

4.5

⎯

4.4

⎯

High-level output

voltage

4.5

4.18

4.31

⎯

4.13

⎯

V

4.5

⎯

0.0

0.1

⎯

0.1

Low-level output

voltage

4.5

⎯

0.17

0.26

⎯

0.33

V

3-state output

off-state current

5.5

⎯

⎯

±0.5

⎯

±5.0

μA

Input leakage

current

5.5

⎯

⎯

±0.1

⎯

±1.0

μA

5.5

⎯

⎯

4.0

⎯

40.0

μA

Quiescent supply

current

5.5

⎯

⎯

2.0

⎯

2.9

mA