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TLP523 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. TLP523
Description  GaAs Ired & Photo−Transistor
Download  7 Pages
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TLP523 Datasheet(HTML) 1 Page - Toshiba Semiconductor

   
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TLP523,TLP523
−2,TLP523−4
2007-10-01
1
TOSHIBA Photocoupler GaAs Ired & Photo
−Transistor
TLP523, TLP523
−2, TLP523−4
Programmable Controllers
DC
−Output Module
Solid State Relay
The TOSHIBA TLP523, −2 and −4 consists of a gallium arsenide
infrared emitting diode coupled with a silicon, darlington connected,
phototransistor which has an integral base−emitter resistor to optimize
switching speed and elevated temperature characteristics.
The TLP523−2 offers two isolated channels in an eight lead plastic DIP
package, while the TLP523−4 provide four isolated channels per
package.
• Current transfer ratio: 500% (min.) (IF = 1 mA)
• Isolation voltage: 2500 Vrms (min.)
• Collector−emitter voltage: 55 V (min.)
• Leakage current: 10μA (max.) (Ta = 85°C)
• UL recognized: UL1577, file no. E67349
Pin Configurations (top view)
1
4
3
2
TLP523
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
1
2
7
6
3
8
TLP523-2
1, 3 : Anode
2, 4 : Cathode
5, 7 : Emitter
6, 8 : Collector
4
5
5
6
11
10
7
12
8
9
1
2
15
14
3
16
TLP523-4
4
13
1, 3, 5, 7
2, 4, 6, 8
9, 11, 13, 15
10, 12, 14, 16
: Anode
: Cathode
: Emitter
: Collector
TOSHIBA
11
−5B2
Weight: 0.26 g
TOSHIBA
11
−10C4
Weight: 0.54 g
TOSHIBA
11
−20A3
Weight: 1.1 g
Unit in mm


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