SSM3K106TU

2007-11-01

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K106TU

High-Speed Switching Applications

• 4 V drive

• Low ON-resistance:

Characteristic

Symbol

Rating

Unit

Drain-source voltage

20

V

Gate-source voltage

± 20

V

DC

1.2

Drain current

Pulse

2.4

A

800

Drain power dissipation

500

mW

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure

rate, etc).

Note 1: Mounted on a ceramic board.

(25.4 mm

Note 2: Mounted on an FR4 board.

(25.4 mm

Characteristic

Symbol

Test Conditions

Min

Typ.

Max

Unit

Drain-source breakdown voltage

20

⎯

⎯

V

Drain cutoff current

⎯

⎯

1

μA

Gate leakage current

⎯

⎯

±1

μA

Gate threshold voltage

1.1

⎯

2.3

V

Forward transfer admittance

(Note 3)

0.58

1.16

⎯

S

(Note 3)

⎯

230

310

Drain-source ON-resistance

(Note 3)

⎯

390

530

m

Ω

Input capacitance

⎯

36

⎯

pF

Output capacitance

⎯

30

⎯

pF

Reverse transfer capacitance

⎯

10

⎯

pF

Turn-on time

⎯

21

⎯

Switching time

Turn-off time

⎯

8

⎯

ns

Drain-source forward voltage

(Note 3)

⎯

−1.0

V

Note 3: Pulse test

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-2U1A

Weight: 6.6 mg (typ.)

1: Gate

2: Source

3: Drain

1.7±0.1

2.1±0.1

1

2

3

UFM