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TLP570 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TLP570 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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TLP570,TLP571 2007-10-01 3 Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ― ― 10 μA Capacitance CT V = 0, f = 1 MHz ― 30 ― pF Collector −emitter breakdown voltage V(BR)CEO IC = 1 mA 35 ― ― V Emitter −collector breakdown voltage V(BR)ECO IE = 0.1 mA 7 ― ― V Collector −base breakdown voltage (TLP571) V(BR)CBO IC = 0.1 mA 80 ― ― V Emitter −base breakdown voltage (TLP571) V(BR)EBO IE = 0.1 mA 7 ― ― V VCE = 24 V ― 10 200 nA Collector dark current ICEO VCE = 24 V, Ta = 85°C ― ― 300 μA Collector dark current (TLP571) ICER VCE = 24 V, Ta = 85°C RBE = 10 MΩ ― 0.5 10 μA Collector dark current (TLP571) ICBO VCB = 10 V ― 0.01 ― nA DC forward current gain (TLP571) hFE VCE = 5 V, IC = 10 mA ― 50k ― ― Capacitance (collector to emitter) CCE V = 0, f = 1 MHz ― 10 ― pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIn. Typ. Max. Unit Current transfer ratio IC / IF IF = 1 mA, VCE = 1 V 1000 2000 ― % Saturated CTR IC / IF (sat) IF = 10 mA, VCE = 1 V 500 ― ― % Base photo −current (TLP571) IPB IF = 1 mA, VCB = 1 V ― 2 ― μA IC = 10 mA, IF = 1 mA ― ― 1.0 Collector −emitter saturation voltage VCE (sat) IC = 100 mA, IF = 10 mA 0.3 ― 1.2 V |
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