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TLP572-07 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TLP572-07 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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TLP572 2007-10-01 3 Individual Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ⎯ ⎯ 10 μA LED Capacitance CT V = 0, f = 1 MHz ⎯ 30 ⎯ pF Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA 55 ⎯ ⎯ V Emitter-collector breakdown voltage V(BR)ECO IE = 0.1 mA 0.3 ⎯ ⎯ V VCE = 24 V ⎯ 10 200 nA Collector dark current ICEO VCE = 24 V, Ta = 85°C ⎯ 0.5 10 μA Detector Capacitance (collector to emitter) CCE V = 0, f = 1 MHz ⎯ 10 ⎯ pF Coupled Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Current transfer ratio IC/IF IF = 1 mA, VCE = 1.2 V 1000 2000 ⎯ % Collector-emitter saturation voltage VCE(sat) IC = 100 mA, IF = 10 mA 0.3 ⎯ 1.2 V Isolation Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Capacitance (input to output) CS VS = 0, f = 1 MHz ⎯ 0.8 ⎯ pF Isolation resistance RS VS = 500 V, R.H. ≤ 60% 5 × 10 10 10 14 ⎯ Ω AC isolation voltage BVS AC, 1 minute 2500 ⎯ ⎯ Vrms |
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