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TLP590B Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TLP590B Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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TLP590B 2002-09-25 2 Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Forward current IF ― 20 25 mA Operating temperature Topr −25 ― 85 °C Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10 mA 1.2 1.4 1.7 V Reverse current IR VR = 3 V — — 10 μA Capacitance CT V = 0, f = 1 MHz — 30 60 pF Forward voltage VFD IFD = 10 μA — 7 — V Reverse current IRD VRD = 10 V — 1 — nA Capacitance (anode to cathode) CTD V = 0, f = 1 MHz — — — pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Open voltage VOC IF = 10 mA 7.0 8.0 — V Short current ISC IF = 10 mA 12 20 — μA Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Capacitance input to output CS VS = 0, f = 1 MHz — 0.8 — pF Isolation resistance RS VS = 500 V, R.H. ≤ 60% 5×10 10 10 14 — Ω AC, 1 minute 2500 — — AC, 1 second in oil — 5000 — Vrms Isolation voltage BVS DC, 1 minute in oil — 5000 — Vdc Switching Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Turn −on time ton — 0.2 — ms Turn −off time toff IF = 20mA, RSH = 510kΩ CL =1000pF (Fig.1) — 1 — ms Fig. 1 Switching time test circuit VOUT CL IF RSH RSH : External shunt resistance tOFF tON IF VOUT 1V 5V 0V |
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