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TLP590B Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. TLP590B
Description  Telecommunication Programmable Controllers Mos Gate Driver MOS FET Gate Driver
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP590B Datasheet(HTML) 2 Page - Toshiba Semiconductor

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TLP590B
2002-09-25
2
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Forward current
IF
20
25
mA
Operating temperature
Topr
−25
85
°C
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 10 mA
1.2
1.4
1.7
V
Reverse current
IR
VR = 3 V
10
μA
Capacitance
CT
V = 0, f = 1 MHz
30
60
pF
Forward voltage
VFD
IFD = 10 μA
7
V
Reverse current
IRD
VRD = 10 V
1
nA
Capacitance
(anode to cathode)
CTD
V = 0, f = 1 MHz
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Open voltage
VOC
IF = 10 mA
7.0
8.0
V
Short current
ISC
IF = 10 mA
12
20
μA
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Capacitance input to output
CS
VS = 0, f = 1 MHz
0.8
pF
Isolation resistance
RS
VS = 500 V, R.H. ≤ 60%
5×10
10
10
14
AC, 1 minute
2500
AC, 1 second in oil
5000
Vrms
Isolation voltage
BVS
DC, 1 minute in oil
5000
Vdc
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Turn
−on time
ton
0.2
ms
Turn
−off time
toff
IF = 20mA, RSH = 510kΩ
CL =1000pF
(Fig.1)
1
ms
Fig. 1 Switching time test circuit
VOUT
CL
IF
RSH
RSH : External shunt resistance
tOFF
tON
IF
VOUT
1V
5V
0V


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