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TLP590B Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. TLP590B
Description  Telecommunication Programmable Controllers Mos Gate Driver MOS FET Gate Driver
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP590B Datasheet(HTML) 1 Page - Toshiba Semiconductor

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TLP590B
2002-09-25
1
TOSHIBA Photocoupler GaAℓAs Ired & Photo−Diode Array
TLP590B
Telecommunication
Programmable Controllers
Mos Gate Driver
MOS FET Gate Driver
The TOSHIBA TLP590B consists of an aluminum galium arsenide
infrared emitting diode optically coupled to a series connected photo
diode array in a six lead plastic DIP package.
TLP590B is suitable for MOS FET gate driver.
• UL recognized: UL1577, file No. E67349
Short Current
Short Current
Type
Name
Classification
(min.)
IF
Marking Of
Classification
C20
20μA
20
TLP590B
Standard
12μA
10mA
20, blank
(Note) Application type name for certification test, please
use standard product type name, i.e.
TLP590B(C20): TLP590B
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Forward current
IF
50
mA
Forward current derating
(Ta ≥ 25°C)
ΔIF / °C
−0.5
mA / °C
Pulse forward current
(100μs pulse, 100 pps)
IFP
1
A
Reverse voltage
VR
3
V
Junction temperature
Tj
125
°C
Foward current
IFD
50
μA
Reverse voltage
VRD
10
V
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Operating temperature range
Topr
−40~85
°C
Lead soldering temperature
(10sec.)
Tsol
260
°C
Isolation voltage
(AC, 1 min., R.H. ≤ 60%)
(Note 1)
BVS
2500
Vrms
(Note 1)
Device considered a two terminal device: Pins 1, 2 and 3
shorted together, and pins 4 and 6 shorted together.
Pin Configuration(top view)
1. : Anode
2. : Cathode
3. : NC
4. : Cathode
6. : Anode
1
2
4
6
3
Unit in mm
TOSHIBA
11−7A9
Weight: 0.39g


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