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SSM3K101TU Datasheet(PDF) 4 Page - Toshiba Semiconductor

Part # SSM3K101TU
Description  Silicon N Channel MOS Type High Speed Switching Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

SSM3K101TU Datasheet(HTML) 4 Page - Toshiba Semiconductor

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SSM3K101TU
2007-11-01
4
|Yfs| - ID
0.1
1.0
10.0
0.01
0.1
1
10
Drain current ID (A)
Common Source
VDS=3V
Ta=25°C
PD - Ta
0
200
400
600
800
1000
0
20
40
60
80 100 120 140 160
Ambient temperature Ta(°C)
a
b
a: mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
b:mounted on ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
C - VDS
10
100
1000
0.1
1
10
100
Drain-Source voltage VDS (V)
Ciss
Coss
Crss
Common Source
VGS=0V
f=1MHz
Ta=25°C
Ta=85°C
25°C
-25°C
t - ID
1
10
100
1000
0.01
0.1
1
10
Drain current ID (A)
toff
tr
ton
tf
Common Source
VDD=10V
VGS=0 to 2.5V
Ta=25°C
IDR - VDS
0.001
0.01
0.1
1
10
-1
-0.8
-0.6
-0.4
-0.2
0
Drain-Source voltage VDS (V)
S
IDR
G
D
Common Source
VGS=0V
Ta=25°C
Ta=85°C
25°C
-25°C
Rth - tw
1
10
100
1000
0.001
0.01
0.1
1
10
100
1000
Pulse w idth tw (S)
a
b
c
Single pulse
a:Mounted on ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
b:Mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
c:Mounted on FR4 Board
(25.4mm×25.4mm×1.6mm)
Cu Pad :0.45mm×0.8mm×3


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