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2SA1930 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SA1930 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 5 page 2SA1930 2007-06-15 3 −0.01 VCEO max 10 ms* −3 −5 −1 −3 −0.5 −0.1 −0.3 −0.05 −0.03 −1000 −10 −30 −100 −300 100 μs* 100 ms* 1 ms* 10 −0.01 −0.1 −1 1000 100 Tc = 100°C Tc = −25°C Tc = 25°C −10 −0.1 −0.01 −0.1 −1 −10 −1 −10 Tc = 100°C Tc = −25°C Tc = 25°C −0.01 0 0 −2.0 −0.4 −0.8 −1.2 −1.6 Tc = 100°C −25 25 −0.4 −0.8 −1.2 −1.6 −2.0 0 0 −2.0 −0.4 −0.8 −1.2 −10 −1.6 IB = −2 mA −300 −2 −4 −6 −8 −6 −4 −200 −100 −40 −30 −20 −10 −50 Collector-emitter voltage VCE (V) IC – VCE Base-emitter voltage VBE (V) IC – VBE Collector current IC (A) VCE (sat) – IC Collector-emitter voltage VCE (V) Safe Operating Area Common emitter VCE = −5 V Collector current IC (A) hFE – IC Common emitter VCE = −5 V *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. IC max (pulsed)* IC max DC operation Tc = 25°C Common emitter IC/IB = 10 Common emitter Tc = 25°C (continuous) −8 |
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