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2SA1930 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part # 2SA1930
Description  Power Amplifier Applications Driver Stage Amplifier Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SA1930 Datasheet(HTML) 3 Page - Toshiba Semiconductor

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2SA1930
2007-06-15
3
−0.01
VCEO max
10 ms*
−3
−5
−1
−3
−0.5
−0.1
−0.3
−0.05
−0.03
−1000
−10
−30
−100
−300
100 μs*
100 ms*
1 ms*
10
−0.01
−0.1
−1
1000
100
Tc = 100°C
Tc = −25°C
Tc = 25°C
−10
−0.1
−0.01
−0.1
−1
−10
−1
−10
Tc = 100°C
Tc = −25°C
Tc = 25°C
−0.01
0
0
−2.0
−0.4
−0.8
−1.2
−1.6
Tc = 100°C
−25
25
−0.4
−0.8
−1.2
−1.6
−2.0
0
0
−2.0
−0.4
−0.8
−1.2
−10
−1.6
IB = −2 mA
−300
−2
−4
−6
−8
−6
−4
−200
−100
−40
−30
−20
−10
−50
Collector-emitter voltage VCE (V)
IC – VCE
Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (A)
VCE (sat) – IC
Collector-emitter voltage VCE (V)
Safe Operating Area
Common emitter
VCE = −5 V
Collector current IC (A)
hFE – IC
Common emitter
VCE = −5 V
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
IC max (pulsed)*
IC max
DC operation
Tc = 25°C
Common emitter
IC/IB = 10
Common emitter
Tc = 25°C
(continuous)
−8


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