SSM3K04FE

2007-11-01

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K04FE

High Speed Switching Applications

• 2.5 V gate drive

• Small package

Characteristics

Symbol

Rating

Unit

Drain-source voltage

20

V

Gate-source voltage

10

V

DC drain current

100

mA

Drain power dissipation

100

mW

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

Equivalent Circuit

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-2HA1B

Weight: 2.3 mg (typ.)