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SSM3K01T Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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SSM3K01T Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 5 page SSM3K01T 2007-11-01 4 Drain current ID (A) t – ID Ambient temperature Ta (°C) PD – Ta 10 0.01 Common Source VDD = 15 V VGS = 0~2.5 V RG = 4.7 Ω Ta = 25°C 1000 tr ton tf toff 100 0.1 1 Drain-source voltage VDS (V) Safe operating area rth – tw Pulse width tw (s) 1 0.001 Single pulse Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm 2 ) 1000 0.01 0.1 1 10 100 10 100 1000 0.01 1 10 0.1 0.1 100 10 1 Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm 2 ) DC operation ID max (pulsed) ID max (continuous) 10 ms* 1 ms* 10 s* Ta = 25°C *: Single nonrepetitive Pulse Ta = 25°C Curves must be derated linearly with increase in temperature. VDSS max 1.5 0 0 Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm 2 ) t = 10 s DC 1 0.75 25 50 75 100 125 150 1.25 0.5 0.25 |
Similar Part No. - SSM3K01T_07 |
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Similar Description - SSM3K01T_07 |
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