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2SA1160 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SA1160 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 4 page 2SA1160 2006-11-09 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −20 V, IE = 0 ⎯ ⎯ −100 nA Emitter cut-off current IEBO VEB = −6 V, IC = 0 ⎯ ⎯ −100 nA Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −10 ⎯ ⎯ V Emitter-base breakdown voltage V (BR) EBO IE = −1 mA, IC = 0 −6 ⎯ ⎯ V DC current gain hFE (1) (Note 3) VCE = −1 V, IC = −0.5 A 140 ⎯ 600 Collector-emitter saturation voltage hFE (2) VCE = −1 V, IC = −4 A 60 120 ⎯ Base-emitter saturation voltage VCE (sat) IC = −2 A, IB = −50 mA ⎯ −0.20 −0.50 V Base-emitter voltage VBE VCE = −1 V, IC = −2 A ⎯ −0.83 −1.5 V Transition frequency fT VCE = −1 V, IC = −0.5 A ⎯ 140 ⎯ MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ⎯ 50 ⎯ pF Note 3: hFE (1) Classification A: 140 to 280, B: 200 to 400, C: 300 to 600 Marking A1160 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Characteristics indicator Part No. (or abbreviation code) |
Similar Part No. - 2SA1160_07 |
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Similar Description - 2SA1160_07 |
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