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2SA1145 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SA1145 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page  2SA1145 2006-11-09 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −150 V, IE = 0 ⎯ ⎯ −0.1 μA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ⎯ ⎯ −0.1 μA Collector-emitter breakdown voltage V (BR) CEO IC = −1 mA, IB = 0 −150 ⎯ ⎯ V DC current gain hFE (Note) VCE = −5 V, IC = −10 mA 80 ⎯ 240 Collector-emitter saturation voltage VCE (sat) IC = −10 mA, IB = −1 mA ⎯ ⎯ −1.0 V Base-emitter voltage VBE VCE = −5 V, IC = −10 mA ⎯ ⎯ −0.8 V Transition frequency fT VCE = −5 V, IC = −10 mA ⎯ 200 ⎯ MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ⎯ 2.5 ⎯ pF Note: hFE classification O: 80 to 160, Y: 120 to 240 Marking A1145 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Characteristics indicator Part No. (or abbreviation code) |
Similar Part No. - 2SA1145_07 |
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Similar Description - 2SA1145_07 |
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