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R1LV1616HBG-I Datasheet(PDF) 1 Page - Renesas Technology Corp

Part No. R1LV1616HBG-I
Description  Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit)
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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R1LV1616HBG-I Datasheet(HTML) 1 Page - Renesas Technology Corp

 
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Rev.1.00, Sep.21.2005, page 1 of 13
R1LV1616HBG-I Series
Wide Temperature Range Version
16 M SRAM (1-Mword
× 16-bit)
REJ03C0263-0100
Rev.1.00
Sep.21.2005
Description
The R1LV1616HBG-I Series is 16-Mbit static RAM organized 1-Mword
× 16-bit. R1LV1616HBG-I Series has
realized higher density, higher performance and low power consumption by employing CMOS process technology (6-
transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup
systems. It is packaged in 48-ball plastic FBGA for high density surface mounting.
Features
• Single 3.0 V supply: 2.7 V to 3.6 V
• Fast access time: 45/55 ns (max)
• Power dissipation:
 Active: 9 mW/MHz (typ)
 Standby: 1.5 µW (typ)
• Completely static memory.
 No clock or timing strobe required
• Equal access and cycle times
• Common data input and output.
 Three state output
• Battery backup operation.
 2 chip selection for battery backup
• Temperature range: −40 to +85°C
Ordering Information
Type No.
Access time
Package
R1LV1616HBG-4SI
45 ns
48-ball plastic FBGA with 0.75 mm ball pitch
R1LV1616HBG-5SI
55 ns
PTBG0048HF (48FHJ)


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