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DF3A6.8FV Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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DF3A6.8FV Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 3 page DF3A6.8FV 2007-11-01 2 Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 (Contact discharge) ± 30kV Criterion: No damage to device elements Marking Equivalent Circuit (top view) CT - VR 10 100 02 468 Ta=25°C f=1MHz REVERSE VOLTAGE VR (V) 6.8 |
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