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DF3A6.2FU Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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DF3A6.2FU Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page DF3A6.2FU 2007-11-01 1 TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A6.2FU Product for Use Only as Protection against Electrostatic Discharge (ESD). * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. • The mounting of two devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Power dissipation P 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Zener voltage VZ IZ = 5 mA 5.8 6.2 6.6 V Dynamic impedance ZZ IZ = 5 mA ⎯ ⎯ 30 Ω Reverse current IR VR = 3 V ⎯ ⎯ 1.0 μA Terminal capacitance (between Cathode and Anode) CT VR = 0, f = 1 MHz ― 55 ― pF Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 (Contact discharge) ± 30 kV Criterion: No damage to device elements Unit: mm JEDEC ⎯ JEITA ⎯ TOSHIBA 1-2P1A Weight: 0.006 g (typ.) |
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