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TLP3924 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. TLP3924
Description  TELECOMMUNICATION PROGRAMMABLE CONTROLLERS MOS FET GATE DRIVER
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP3924 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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TLP3924
2007-10-01
2
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward Current
IF
30
mA
Forward Current
Derating (Ta ≥ 25°C)
ΔIF / °C
−0.3
mA / °C
Reverse Voltage
VR
5
V
LED
Junction Temperature
Tj
125
°C
Forward Current
IFD
50
μA
Reverse Voltage
VRD
10
V
DETECTOR
Junction Temperature
Tj
125
°C
Storage Temperature Range
Tstg
−55~125
°C
Operating Temperature Range
Topr
−40~85
°C
Lead Soldering Temperature (10 s)
Tsol
260
°C
Isolation Voltage
(AC, 1 min., R.H. ≤ 60%)
(Note 1)
BVS
1500
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) : Device considered a two terminal device: Pins 1 and 2 shorted together and pins 3 and 4 shorted together.
Caution
This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and
equipment are earthed.
Recommended Operating Conditions (Note 2)
Characteristic
Symbol
Min
Typ.
Max
Unit
Forward Current
IF
7
20
mA
Operating Temperature
Topr
−25
65
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward Voltage
VF
IF = 10 mA
1.15
1.30
1.45
V
Reverse Current
IR
VR = 5 V
10
μA
LED
Capacitance
CT
V = 0, f = 1 MHz
30
pF
Forward Voltage
VFD
IFD = 10 μA
39
V
Reverse Current
IRD
VRD = 10 V
1
nA
DETECTOR
Capacitance
(Anode to Cathode)
CTD
V = 0, f = 1 MHz
1.5
pF


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