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CUS03 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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CUS03 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page CUS03 2006-11-13 1 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CUS03 Switching Mode Power Supply Applications Portable Equipment Battery Application • Forward voltage: VFM = 0.52 V@IF = 0.7 A • Average forward current: IF (AV) = 0.7A • Repetitive peak reverse voltage: VRRM = 40 V • Suitable for compact assembly due to small surface-mount package “US−FLATTM” (Toshiba package name) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 40 V Average forward current IF (AV) 0.7 (Note 1) A Peak one cycle surge forward current IFSM 20 (50 Hz) A Junction temperature Tj −40 to 150 °C Storage temperature range Tstg −40 to 150 °C Note 1: Ta = 53°C: Device mounted on a glass-epoxy board Board size: 50 mm × 50 mm, Land size: 6 mm × 6 mm Rectangular waveform (α = 180°), VR = 20 V Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit VFM (1) IFM = 0.1 A ― 0.37 ― Peak forward voltage VFM (2) IFM = 0.7 A ― 0.48 0.52 V IRRM (1) VRRM = 5 V ― 0.4 ― Repetitive peak reverse current IRRM (2) VRRM = 40 V ― 3.0 100 μA Junction capacitance Cj VR = 10 V, f = 1.0 MHz ― 45 ― pF Device mounted on a ceramic board (board size: 50 mm × 50 mm) (soldering land: 2 mm × 2 mm) (board thickness: 0.64 t) ― ― 75 Thermal resistance (junction to ambient) Rth (j-a) Device mounted on a glass-epoxy board (board size: 50 mm × 50 mm) (soldering land: 6 mm × 6 mm) (board thickness: 1.6 t) ― ― 150 °C/W Thermal resistance (junction to lead) Rth (j-ℓ) Junction to lead of cathode side ― ― 30 °C/W Unit: mm JEDEC ― JEITA TOSHIBA 3-2B1A Weight: 0.004 g (typ.) |
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