TC74AC00P_07 datasheet(3/9 Pages) TOSHIBA

Part #	TC74AC00P

Description	CMOS Digital Integrated Circuit Silicon Monolithic Quad 2-Input NAND Gate

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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TC74AC00P/F/FN/FT

2007-10-01

3

Operating Ranges (Note)

Characteristics

Symbol

Rating

Unit

Supply voltage

VCC

2.0 to 5.5

V

Input voltage

VIN

0 to VCC

V

Output voltage

VOUT

0 to VCC

V

Operating temperature

Topr

−40 to 85

°C

Input rise and fall time

dt/dV

0 to 100 (VCC = 3.3 ± 0.3 V)

0 to 20 (VCC = 5 ± 0.5 V)

ns/V

Note:

The operating ranges must be maintained to ensure the normal operation of the device.

Unused inputs must be tied to either VCC or GND.

Electrical Characteristics

DC Characteristics

Test Condition

Ta = 25°C

Ta =

−40 to 85°C

Characteristics

Symbol

VCC

(V)

Min

Typ.

Max

Min

Max

Unit

High-level input

voltage

VIH

―

2.0

3.0

5.5

1.50

2.10

3.85

―

1.50

2.10

3.85

―

V

Low-level input

voltage

VIL

―

2.0

3.0

5.5

―

0.50

0.90

1.65

―

0.50

0.90

1.65

V

IOH = −50 μA

2.0

3.0

4.5

1.9

2.9

4.4

2.0

3.0

4.5

―

1.9

2.9

4.4

―

High-level output

voltage

VOH

VIN

= VIH or

VIL

IOH = −4 mA

IOH = −24 mA

IOH = −75 mA (Note)

3.0

4.5

5.5

2.58

3.94

―

2.48

3.80

3.85

―

V

IOL = 50 μA

2.0

3.0

4.5

―

0.0

0.1

―

0.1

Low-level output

voltage

VOL

VIN

= VIH

IOL = 12 mA

IOL = 24 mA

IOL = 75 mA

(Note)

3.0

4.5

5.5

―

0.36

―

0.44

1.65

V

Input leakage

current

IIN

VIN = VCC or GND

5.5

―

±0.1

―

±1.0

μA

Quiescent supply

current

ICC

VIN = VCC or GND

5.5

―

4.0

―

40.0

μA

Note:

This spec indicates the capability of driving 50 Ω transmission lines.

One output should be tested at a time for a 10 ms maximum duration.

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TC74AC00P Datasheet(PDF) 3 Page - Toshiba Semiconductor

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