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TC9WMB1AFK Datasheet(PDF) 12 Page - Toshiba Semiconductor

Part No. TC9WMB1AFK
Description  CMOS Digital Integrated Circuits Silicon Monolithic
Download  18 Pages
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TC9WMB1AFK Datasheet(HTML) 12 Page - Toshiba Semiconductor

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TC9WMB1AFK/FU,TC9WMB2AFK/FU
2007-10-19
12
Electrical Characteristics
DC Characteristics (GND = 0 V, Topr = −40 to 85°C)
1.8
≤ VCC < 2.3 V 2.3 ≤ VCC ≤ 3.6 V
Characteristics
Symbol
Test
Condition
Min
Max
Min
Max
Unit
Input current
ILI
±1
±1
μA
Output leakage current
ILO
±1
±1
μA
IOL = 3.2 mA
0.4
Low-level output voltage
VOL
IOL = 1.5 mA
0.5
V
Quiescent supply current
ICC1
5
5
μA
Supply current during read
ICC2
f
= 400 kHz
0.2*
0.3
mA
Supply current during write
ICC3
f
= 400 kHz
1.5
mA
*: f
= 100 kHz
AC Characteristics (GND = 0 V, Topr = −40 to 85°C)
Test Conditions
Input rise/fall time
20 ns
Input/output testing voltage
0.5
× VCC
Output load
100 pF
+ 1 kΩ pull-up resistor
1.8
≤ VCC < 2.3 V 2.3 ≤ VCC ≤ 3.6 V
Characteristics
Symbol
Min
Max
Min
Max
Unit
SCL clock frequency
fSCL
0
100
0
400
kHz
SCL clock low time
tLOW
4.7
1.2
μs
SCL clock high time
tHIGH
4.0
0.8
μs
Noise suppression time
tI
100
50
ns
SDA output delay
tAA
0.1
4.5
0.1
0.9
μs
Bus free time
tBUF
4.7
1.2
μs
Start condition hold time
tHD.STA
4.0
0.6
μs
Start condition setup time
tSU.STA
4.7
0.6
μs
Data input hold time
tHD.DAT
0
0
ns
Data input setup time
tSU.DAT
300
200
ns
SCL, SDA input rise time
tR
1.0
0.3
μs
SCL, SDA input fall time
tF
0.3
0.3
μs
Stop condition setup time
tSU.STO
4.7
0.6
μs
SDA output hold time
tDH
100
50
ns
VCC
RL = 1 kΩ
SDA
CL = 100 pF


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