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TC7WG32FC Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. TC7WG32FC
Description  CMOS Digital Integrated Circuit Silicon Monolithic Dual 2-Input OR Gate
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TC7WG32FC Datasheet(HTML) 1 Page - Toshiba Semiconductor

   
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TC7WG32FC
2007-11-01
1
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7WG32FC
Dual 2-Input OR Gate
Features
• High-level output current:
IOH/IOL = ±8 mA (min)
at VCC = 3 V
• High-speed operation: tpd = 2.8 ns (typ.)
at VCC = 3.3 V,15pF
• Operating voltage range: VCC = 0.9~3.6 V
• 5.5-V tolerant inputs
• 3.6-V power down protection outputs
Marking
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Value
Unit
Power supply voltage
VCC
−0.5~4.6
V
DC input voltage
VIN
−0.5~7.0
V
−0.5~4.6 (Note 1)
DC output voltage
VOUT
−0.5~VCC + 0.5 (Note 2)
V
Input diode current
IIK
−20
mA
Output diode current
IOK
−20
(Note 3)
mA
DC output current
IOUT
±25
mA
DC VCC/GND current
ICC
±50
mA
Power dissipation
PD
150
(Note 4) mW
Storage temperature
Tstg
−65~150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: VCC = 0V
Note 2: High or Low State.
IOUT absolute maximum rating must be observed.
Note 3: VOUT < GND
Note 4: Mounted on an FR4 board.
(25.4 mm
× 25.4 mm × 1.6 t, Cu Pad: 11.56 mm
2
)
Pin Assignment (top view)
TC7WG32FC
CSON8-P-0.4
Weight: 0.002 g (typ.)
G32
Product name
1
2
3
4
8
7
6
5
1A
1B
2Y
GND
1Y
2B
2A
Vcc


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