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TC7WG08FU Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. TC7WG08FU
Description  CMOS Digital Integrated Circuit Silicon Monolithic Dual 2-Input AND Gate
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TC7WG08FU Datasheet(HTML) 1 Page - Toshiba Semiconductor

   
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TC7WG08FU/FK
2007-11-01
1
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7WG08FU,TC7WG08FK
Dual 2-Input AND Gate
Features
• High-level output current:
IOH/IOL = ±8 mA (min)
at VCC = 3 V
• High-speed operation: tpd = 2.5 ns (typ.)
at VCC = 3.3 V,15pF
• Operating voltage range: VCC = 0.9~3.6 V
• 5.5-V tolerant inputs
• 3.6-V power down protection outputs
Marking
Absolute Maximum Ratings (Ta = 25°C)
Pin Assignment (top view)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1:
VCC = 0 V
Note 2:
High or Low State. IOUT absolute maximum rating must be observed.
Note 3:
VOUT < GND
TC7WG08FU
TC7WG08FK
Weight
SSOP8-P-0.65 : 0.02 g (typ.)
SSOP8-P-0.50A : 0.01 g (typ.)
Characteristics
Symbol
Value
Unit
Power supply voltage
VCC
−0.5~4.6
V
DC input voltage
VIN
−0.5~7.0
V
−0.5~4.6 (Note 1)
DC output voltage
VOUT
−0.5~VCC + 0.5 (Note 2)
V
Input diode current
IIK
−20
mA
Output diode current
IOK
−20 (Note 3)
mA
DC output current
IOUT
±25
mA
DC VCC / ground current
ICC
±50
mA
Power dissipation
PD
300 (SM8)
200 (US8)
mW
Storage temperature
Tstg
−65~150
°C
SM8
US8
Product name
G 08
Lot No.
WG
08
VCC
2B
2A
1A
GND
1B
1
2
3
4
2Y
1Y
8
7
6
5


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