![]() |
Electronic Components Datasheet Search |
|
TC7WG08FC Datasheet(PDF) 1 Page - Toshiba Semiconductor |
|
TC7WG08FC Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page ![]() TC7WG08FC 2007-11-01 1 TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WG08FC Dual 2-Input AND Gate Features • High-level output current: IOH/IOL = ±8 mA (min) at VCC = 3 V • High-speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V,15pF • Operating voltage range: VCC = 0.9~3.6 V • 5.5-V tolerant inputs • 3.6-V power down protection outputs Marking Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Value Unit Power supply voltage VCC −0.5~4.6 V DC input voltage VIN −0.5~7.0 V −0.5~4.6 (Note 1) DC output voltage VOUT −0.5~VCC + 0.5 (Note 2) V Input diode current IIK −20 mA Output diode current IOK −20 (Note 3) mA DC output current IOUT ±25 mA DC VCC/GND current ICC ±50 mA Power dissipation PD 150 (Note 4) mW Storage temperature Tstg −65~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: VCC = 0V Note 2: High or Low State. IOUT absolute maximum rating must be observed. Note 3: VOUT < GND Note 4: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 11.56 mm 2 ) Pin Assignment (top view) TC7WG08FC CSON8-P-0.4 Weight: 0.002 g (typ.) G08 Product name 1 2 3 4 8 7 6 5 1A 1B 2Y GND 1Y 2B 2A Vcc |