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TC7WG00FC Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part No. TC7WG00FC
Description  CMOS Digital Integrated Circuit Silicon Monolithic Dual 2-Input NAND Gate
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TC7WG00FC Datasheet(HTML) 3 Page - Toshiba Semiconductor

   
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TC7WG00FC
2007-11-01
3
DC Electrical Characteristics
Ta
= 25°C
Ta
= −40~85°C
Characteristics
Symbol
Test Condition
VCC (V)
Min
Typ.
Max
Min
Max
Unit
0.9
VCC
VCC
1.1~1.3
VCC
× 0.7
VCC
× 0.7
1.4~1.6
VCC
× 0.65
VCC
× 0.65
1.65~1.95
VCC
× 0.65
VCC
× 0.65
2.3~2.7
1.7
1.7
High-level
input voltage
VIH
3.0~3.6
2.0
2.0
V
0.9
GND
GND
1.1~1.3
VCC
× 0.3
VCC
× 0.3
1.4~1.6
VCC
× 0.35
VCC
× 0.35
1.65~1.95
VCC
× 0.35
VCC
× 0.35
2.3~2.7
0.7
0.7
Low-level
input voltage
VIL
3.0~3.6
0.8
0.8
V
IOH =−0.02 mA
0.9
0.75
0.75
IOH = −0.3 mA
1.1~1.3
VCC
× 0.75
VCC
× 0.75
IOH = −1.7 mA
1.4~1.6
VCC
× 0.75
VCC
× 0.75
IOH = −3.0 mA
1.65~
1.95
VCC
-0.45
VCC
-0.45
IOH = −4.0 mA
2.3~2.7
2.0
2.0
High-level
output voltage
VOH
VIN = VIH
or VIL
IOH = −8.0 mA
3.0~3.6
2.48
2.48
V
IOL = 0.02 mA
0.9
0.1
0.1
IOL = 0.3 mA
1.1~1.3
VCC
× 0.25
VCC
× 0.25
IOL = 1.7 mA
1.4~1.6
VCC
× 0.25
VCC
× 0.25
IOL = 3.0 mA
1.65~
1.95
0.45
0.45
IOL = 4.0 mA
2.3~2.7
0.4
0.4
Low-level
output voltage
VOL
VIN = VIH
IOL = 8.0 mA
3.0~3.6
0.4
0.4
V
Input leakage
current
IIN
VIN = 0~5.5V
0~3.6
±0.1
±1.0
μA
Power off
leakage current
IOFF
VIN = 0~5.5V
VOUT = 0~3.6V
0
1.0
10.0
μA
Quiescent
supply current
ICC
VIN = VCC or GND
3.6
1.0
10.0
μΑ


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