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TMS28F200BZT70BDBJE Datasheet(PDF) 1 Page - Texas Instruments |
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TMS28F200BZT70BDBJE Datasheet(HTML) 1 Page - Texas Instruments |
1 / 29 page TMS28F200BZT, TMS28F200BZB 262144 BY 8-BIT/131072 BY 16-BIT BOOT-BLOCK FLASH MEMORIES SMJS200E – JUNE 1994 – REVISED JANUARY 1998 1 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 D Organization... 262144 by 8 bits 131 072 by 16 bits D Array-Blocking Architecture – Two 8K-Byte Parameter Blocks – One 96K-Byte Main Block – One 128K-Byte Main Block – One 16K-Byte Protected Boot Block – Top or Bottom Boot Locations D All Inputs/Outputs TTL Compatible D Maximum Access/Minimum Cycle Time VCC ± 10% ’28F200BZx70 70 ns ’28F200BZx80 80 ns ’28F200BZx90 90 ns (x = top (T) or bottom (B) boot-block configurations ordered) D 10000 Program/Erase-Cycles D Three Temperature Ranges – Commercial...0 °C to 70°C – Extended...– 40 °C to 85°C – Automotive...– 40 °C to 125°C D Low Power Dissipation (VCC = 5.5 V) – Active Write . . . 330 mW ( Byte-Write) – Active Read... 330 mW ( Byte-Read) – Active Write . . . 358 mW ( Word-Write) – Active Read... 330 mW ( Word-Read) – Block-Erase... 165 mW – Standby... 0.55 mW (CMOS-Input Levels) – Deep Power-Down Mode... 0.0066 mW D Fully Automated On-Chip Erase and Word / Byte-Program Operations D Write-Protection for Boot Block D Industry-Standard Command State Machine (CSM) – Erase-Suspend/Resume – Algorithm-Selection Identifier description The TMS28F200BZx is a 262 144 by 8-bit / 131 072 by 16-bit (2 097 152-bit), boot-block flash memory that can be electrically block-erased and reprogrammed. The TMS28F200BZx is organized in a blocked architecture consisting of one 16K-byte protected boot block, two 8K-byte parameter blocks, one 96K-byte main block, and one 128K-byte main block. The device can be ordered with either a top or bottom boot-block configuration. Operation as a 256K-by 8-bit or a 128K-by16-bit organization is user-definable. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 23 VCC PIN NOMENCLATURE A0 – A16 Address Inputs BYTE Byte Enable DQ0 – DQ14 Data In / Out DQ15/A –1 Data In / Out (word-wide mode), Low-Order Address (byte-wide mode) E Chip Enable G Output Enable NC No Internal Connection RP Reset / Deep Power-Down VCC 5-V Power Supply VPP 12-V Power Supply for Program / Erase VSS Ground W Write Enable DBJ PACKAGE ( TOP VIEW ) VPP NC NC A7 A6 A5 A4 A3 A2 A1 A0 E VSS G DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 RP W A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE VSS DQ15/A –1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 19 20 26 25 DQ3 DQ11 DQ4 21 22 24 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 1998, Texas Instruments Incorporated |
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