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TMS28F200BZB80BDBJL Datasheet(PDF) 9 Page - Texas Instruments |
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TMS28F200BZB80BDBJL Datasheet(HTML) 9 Page - Texas Instruments |
9 / 29 page TMS28F200BZT, TMS28F200BZB 262144 BY 8-BIT/131072 BY 16-BIT BOOT-BLOCK FLASH MEMORIES SMJS200E – JUNE 1994 – REVISED JANUARY 1998 9 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 command state machine operations (continued) During an erase cycle, the CSM responds to status-read and erase-suspend commands. When the WSM has completed its task, the WSM status bit (SB7) is set to a logic-high level and the CSM responds to the full command set. The CSM stays in the current command state until the microprocessor issues another command. The WSM successfully initiates an erase or program operation only when VPP is within its correct voltage range (VPPH). For data protection, it is recommended that RP be held at a logic-low level during a CPU-reset. clear status register The internal circuitry can set only the VPP status bit (SB3), the program status bit (SB4), and the erase status bit (SB5) of the status register. The clear-status-register command (50h) allows the external microprocessor to clear these status bits and synchronize them to internal operations. When the status bits are cleared, the device returns to the read-array mode. read operations There are three read operations available: read-array, read-algorithm-selection-code, and read-status-register. D Read array The array is read by entering the command code FFh on DQ0 – DQ7. Control pins E and G must be at a logic-low level ( VIL) and W and RP must be at a logic-high level (VIH) to read data from the array. Data is available on DQ0 – DQ15 (word-wide mode) or DQ0 – DQ7 (byte-wide mode ). Any valid address within any of the blocks selects that block and allows data to be read from the block. D Read algorithm-selection code Algorithm-selection codes are read by entering command code 90h on DQ0 – DQ7. Two bus cycles are required for this operation: the first to enter the command code and a second to read the device-equivalent code. Control pins E and G must be at a logic-low level ( VIL) and W and RP must be at a logic-high level (VIH). Two identifier bytes are accessed by toggling A0. The manufacturer-equivalent code is obtained on DQ0 – DQ7 with A0 at a logic-low level ( VIL). The device-equivalent code is obtained when A0 is set to a logic-high level ( VIH). Alternatively, the manufacturer- and device-equivalent codes can be read by applying VID (nominally 12 V) to A9 and selecting the desired code by toggling A0 high or low. All other addresses are in the “don’t care” category (see Table 2, Table 4, and Table 5). D Read status register The status register is read by entering the command code 70h on DQ0 – DQ7. Control pins E and G must be at a logic-low level ( VIL) and W and RP must be at a logic-high level (VIH). Two bus cycles are required for this operation: one to enter the command code and a second to read the status register. In a given read cycle, status-register contents are updated on the falling edge of E or G, whichever occurs last within the cycle. boot-block programming / erasing Should changes to the boot block be required, RP must be set to VHH (12 V) and VPP must be set to the programming voltage level ( VPPH). If an attempt is made to write, erase, or erase-suspend the boot block without RP at VHH, an error signal is generated on SB4 (program-status bit) or SB5 (erase-status bit). A program-setup command can be aborted by writing FFh (in byte-wide mode) or FFFFh (in word-wide mode) during the second cycle. After writing FFh or FFFFh during the second cycle, the CSM responds only to status-reads. When the WSM status bit (SB7) is set to a logic-high level, signifying termination of the nonprogram operation, all commands to the CSM become valid again. |
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