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SIW1721BFIGSR Datasheet(PDF) 1 Page - RF Micro Devices

Part No. SIW1721BFIGSR
Description  BLUETOOTH® RADIO MODEM
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Maker  RFMD [RF Micro Devices]
Homepage  http://www.rfmd.com
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SIW1721BFIGSR Datasheet(HTML) 1 Page - RF Micro Devices

 
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RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Ordering Information
Summary
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
GaInP/HBT
GaAs HBT
SiGe HBT
GaN HEMT
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
Features
Bluetooth Subsystem Using the SiW1721B Radio Modem
Ext
Power
Single-ended LNA
and Downconverter
Single-ended Driver
and Upconverter
ADC
DAC
Reference
PLL
Modem
Clock
Generator
SiW1721B Radio Modem
Reference
Clock
CLK Circuit
Analog
Regulator
Digital
Regulator
Radio
Programming
and Control
GFSK
Modulator
GFSK
Demodulator
Mobile Phone
Chip Set
Integrated
Bluetooth
Baseband
SPI
Modem I/F
& Data
The SiW1721B is a 2.4-GHz radio transceiver for Bluetooth wireless
technology. This highly integrated transceiver is specifically designed for use
with a third party Bluetooth baseband controller chipset requiring an
external Bluetooth RF transceiver. Due to its low power CMOS process, the
design minimizes current draw in both active and standby modes.
The SiW1721B combines a radio transceiver and Gaussian Frequency Shift
Keying (GFSK) modem with digital control and interface logic. The IC also
incorporates analog and digital voltage regulators and a reference Phase
Lock Loop (PLL) capable of accepting various reference clock frequencies.
The level of integration enables a low system cost with fewer external
components.
The SiW1721B is packaged in a 5-by-5-mm, Pb-free, 32-pin QFN package
that meets RoHS (Green) requirements. Operating temperature range is
guaranteed from -40°C to +85°C.
SiW1721B
Bluetooth® Radio Modem
See page 12 for details.
0
BLUETOOTH® RADIO MODEM
SiW1721B
60 0076 R00F SiW1721B Radio Modem IC DS
October 6, 2006
• Integrated RF transceiver and
modem for Bluetooth wireless
technology.
• Manufactured using low-power
0.18-micron CMOS process
technology.
• Digital baseband interface connects
directly to an integrated Bluetooth
controller.
• Direct conversion RF architecture
improves receiver-blocking
performance.
• Low out-of-band spurious emissions
minimize interference with mobile
phone operations.
• Hardware AGC dynamically adjusts
receiver performance in changing
environments.
• 50
Ω RF I/O does not need additional
external impedance matching
components.
• On-chip voltage regulation simplifies
system design.
• -88 dBm receiver sensitivity and
+2 dBm transmitter power typical
performance specifications.
• Bluetooth Specification V2.0
qualified. Complies with Bluetooth
specifications V1.1, V1.2 and V2.0.
Applications
• Mobile phones with integrated
controller for Bluetooth wireless
technology.


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